Inhomogeneous Barrier Height Analysis of (Ni/Au)--InAlGaN/GaN Schottky Barrier Diode
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概要
- 論文の詳細を見る
The current--voltage ($I$--$V$) characteristics of (Ni/Au)--InAlGaN/GaN Schottky barrier diode (SBDs) have been measured in the temperature range of 297 to 473 K. Results have been interpreted based on the assumption of Gaussian distribution (GD) of barrier heights (BH) due to BH inhomogeneities at the interface. A modified Richardson plot gives the modified Schottky barrier height ($\bar{\Phi}_{\text{BO}}$) and Richardson constant $A^{*}$ as 1.41 eV and 26 A cm-2 K-2, respectively. The value of Richardson constant, 26 A cm-2 K-2, is very close to the theoretical value of 29.1 A cm-2 K-2. Therefore, the temperature dependence of the forward $I$--$V$ characteristics of the (Ni/Au)--InAlGaN/GaN SBDs can be explained based on the thermionic emission mechanism with GD of BHs.
- 2011-03-25
著者
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Suh Eun-kyung
Department Of Semiconductor Science And Technology And Semiconductor Physics Research Center Chonbuk
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Hong Chang-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Hong Chang-Hee
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Subramaniyam Nagarajan
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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Sopanen Markku
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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Lipsanen Harri
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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Suh Eun-Kyung
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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Lipsanen Harri
Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland
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Sopanen Markku
Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland
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