Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission
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概要
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The effect of trimethylaluminium (TMAl) flow rate and the reactor pressure on the structural and optical properties of In-rich InAlGaN quaternary alloy grown on InGaN/GaN by metal organic chemical vapor deposition (MOCVD) were investigated. The addition of Al atoms to InGaN layers at an optimized growth reactor pressure, 200 mbar in our case, resulted in a broad emission from green to red because of the spatial fluctuation of local In concentration and also the formation of three-dimensional (3D) island structures due to low surface mobilities of Al atoms. When the reactor pressure is decreased below 200 mbar, the In-rich phase separation and related green to red emission have not been observed. Combining the blue emission from InGaN layer with the green to red emission from In-rich InAlGaN alloy layer, white light emission has been obtained. The addition of small amount of Al atoms at an optimum reactor pressure was found to enhance the In-rich phase formation in InAlGaN quaternary alloy.
- 2008-06-25
著者
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Suh Eun-kyung
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Hong Chang-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Hong Chang-Hee
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Nagarajan Subramaniyam
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Oh Tae
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Senthil Kumar
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Suh Eun-Kyung
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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SUH Eun-Kyung
Semiconductor Physics Research Center and Department of Physics, Jeonbuk National University
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Senthil Kumar
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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