Beam Divergence and Thermal Transient Characteristics of InGaN/GaN Light Emitting Diodes with Rear Side Grown ZnO Nanorods
スポンサーリンク
概要
著者
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Hong Chang-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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KUMAR R.
Semiconductor Process Technologies, Institute of Microelectronics
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Kim Hyun
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Han Min
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Ryu Beo
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Jin Joo
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Uthirakumar Periyayya
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Han Yang
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Lee Kyu
Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
関連論文
- Effects of Initial Thermal Cleaning Treatment of a Sapphire Substrate Surface on the GaN Epilayer
- Inhomogeneous Barrier Height Analysis of (Ni/Au)--InAlGaN/GaN Schottky Barrier Diode
- Hole and Interface Traps in Mg-doped Al_Ga_N/GaN Grown by Metalorganic Chemical Vapor Deposition(Electrical Properties of Condensed Matter)
- Characterization of Self Assembled Monolayers for Ultra Low-k Films
- Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission
- Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
- Beam Divergence and Thermal Transient Characteristics of InGaN/GaN Light Emitting Diodes with Rear Side Grown ZnO Nanorods
- Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes