Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
スポンサーリンク
概要
- 論文の詳細を見る
Spatial variation of V-defects and emission characteristics of green-InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and freestanding GaN substrates have been studied. Near-field scanning microscopy exhibits uniformly distributed nanoscale bright spots with a single emission wavelength for MQWs grown on freestanding GaN, whereas, the nanoscale spots get accumulated resulting in large bright areas of micron scale with fluctuated emission wavelengths in case of sapphire. Homoepitaxially grown MQWs reveal large area uniformity in cathodoluminescence emission but a large contrast is observed for sapphire case.
- 2007-04-25
著者
-
Hong Chang-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
-
Park Jae
Semiconductor Laboratory, Samsung Advanced Institute of Technology, Yongin, Gyeonggi 446-712, Korea
-
Jeong Mun
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
-
Jeong Mun
Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea
-
Hong Chang-Hee
Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
-
Suh Eun
Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
-
Cuong Tran
Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
-
Park Jae
Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
-
Kumar Muthusamy
Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
関連論文
- Effects of Initial Thermal Cleaning Treatment of a Sapphire Substrate Surface on the GaN Epilayer
- Inhomogeneous Barrier Height Analysis of (Ni/Au)--InAlGaN/GaN Schottky Barrier Diode
- Impact of High-$k$ HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors
- Hole and Interface Traps in Mg-doped Al_Ga_N/GaN Grown by Metalorganic Chemical Vapor Deposition(Electrical Properties of Condensed Matter)
- Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission
- Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
- Beam Divergence and Thermal Transient Characteristics of InGaN/GaN Light Emitting Diodes with Rear Side Grown ZnO Nanorods
- Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
- Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes
- Fabrication of Cantilevered Tip-on-Aperture Probe for Enhancing Resolution of Scanning Near-Field Optical Microscopy System
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes