Improved Emission Efficiency in InGaN/GaN Quantum Well with Compositionally -Graded Barriers Studied by Time-Resolved Photoluminescence Spectroscopy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-11-15
著者
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Suh Eun-kyung
Department Of Semiconductor Science And Technology And Semiconductor Physics Research Center Chonbuk
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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SOTA Takayuki
Department of Electrical, Electronics, and Computer Engineering, Waseda University
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Sota T
Waseda Univ. Tokyo Jpn
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Sota Takayuki
Graduate School Of Science And Engineering Waseda University
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ONUMA Takeyoshi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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Sota Takayuki
Department Of Electric Electronics And Computer Engineering Waseda University
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Sota T
Graduate School Of Science And Engineering Waseda University
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Onuma Tsuyoshi
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Chichibu S
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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UCHINUMA Yoshimasa
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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LEE Hyung-Jae
Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbu
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Chichibu Shigefusa
Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba
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Lee Hyung-jae
Department Of Semiconductor Science And Technology And Semiconductor Physics Research Center Chonbuk
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Uchinuma Yoshimasa
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Suh Eun-Kyung
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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