Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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AOYAMA Toyomi
Materials and Structures Labolatory, Tokyo Institute of Technology
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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SUGIYAMA Mutsumi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NOSAKA Taiki
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NAKAJIMA Kiyomi
COMET-NIMS, National Institute for Materials Science
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CHIKYOW Toyohiro
COMET-NIMS, National Institute for Materials Science
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AHMET Parhat
COMET-NIMS
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ONUMA Takeyoshi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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