Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm

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概要

• 論文の詳細を見る
• 2003-12-15

著者

• NAKAJIMA Kiyomi

  National Institute for Mateirals Science

• AOYAMA Toyomi

  Materials and Structures Labolatory, Tokyo Institute of Technology

• Ahmet Parhat

  National Institute For Materials Science

• Ahmet P

  Comet-nims National Institute For Materials Science

• MUKAI Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• CHICHIBU Shigefusa

  Institute of Applied Physics, University of Tsukuba

• SOTA Takayuki

  Department of Electrical, Electronics, and Computer Engineering, Waseda University

• Sota T

  Waseda Univ. Tokyo Jpn

• Sota Takayuki

  Graduate School Of Science And Engineering Waseda University

• ONUMA Takeyoshi

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba

• NAGAHAMA Shin-ichi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Sota Takayuki

  Department Of Electric Electronics And Computer Engineering Waseda University

• Sota T

  Graduate School Of Science And Engineering Waseda University

• Onuma Tsuyoshi

  Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba

• AZUHATA Takashi

  Department of Materials Science and Technology, Hirosaki University

• Azuhata Takashi

  Department Of Materials Science And Technology Hirosaki University

• Chichibu S

  Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba

• CHIKYOW Toyohiro

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Chichibu Shigefusa

  Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba

• Aoyama Toyomi

  Materials And Structures Labolatory Tokyo Institute Of Technology

• Aoyama Toyomi

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Nakajima Kiyomi

  National Institute For Material Science

• Nagahama Shin-ichi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Ahmet Parhat

  National Institute For Material Science

• Chikyow Toyohiro

  Materials And Structures Laboratory Tokyo Institute Of Technology

• AZUHATA Takashi

  Department of Electrical, Electronics and Computer Engineering, Waseda University

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