Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
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概要
- 論文の詳細を見る
We compared the lasing characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) fabricated using a GaN substrate with those fabricated using a sapphire substrate. The original substrates are removed from the devices after the devices have been bonded to Si substrates. Consequently, with the exception of the cavity length, the two kinds of fabricated VCSELs have almost the same structures. The VCSELs fabricated using a GaN substrate have a higher maximum output power (0.62 mW) and longer lifetimes than those fabricated using a sapphire substrate. Even for the VCSELs fabricated with a GaN substrate, 10-min operation causes their threshold current to increase.
- Japan Society of Applied Physicsの論文
- 2009-05-25
著者
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Omae Kunimichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Higuchi Yu
Nitride Semiconductor Research Laboratory Nichia Corporation
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Nakagawa Kyosuke
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Anan, Tokushima 774-8601, Ja
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Matsumura Hiroaki
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Anan, Tokushima 774-8601, Ja
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Nakagawa Kyosuke
Nitride Semiconductor Research Laboratory Nichia Corporation
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Matsumura Hiroaki
Nitride Semiconductor Research Laboratory Nichia Corporation
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