Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells

スポンサーリンク

概要

• 論文の詳細を見る
• 2010-07-25

著者

• KAWAKAMI Yoichi

  Department of Electrical Engineering Kyoto University

• MUKAI Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Takahashi Masayoshi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• INOUE Daisuke

  Department of I. M. S. E., Kagawa University

• Narukawa Yukio

  Nitride Semiconductor Research Laboratory Nichia Corporation

• UEDA Masaya

  Department of Electronic Science and Engineering, Kyoto University

• Kawakami Yoichi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• FUNATO Mitsuru

  Department of Electronic Science and Engineering, Kyoto University

• Ueda Masaya

  Department Of Electronic Science And Engineering Kyoto University

• Funato Mitsuru

  Department Of Electronic Science And Engineering Kyoto University

• INOUE Daisuke

  Department of Electronic Science and Engineering, Kyoto University

関連論文

• Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
• Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
• Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
• On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
• Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
• Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
• Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
• Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
• Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
• Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
• Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
• Application of Vertical Comb-Drive MEMS Mirror for a Phase Shift Device
• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
• 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
• High-Power Pure Blue InGaN Laser Diodes
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
• Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
• High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Si-Doped InGaN Films Grown on GaN Films
• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
• Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
• Hole Compensation Mechanism of P-Type GaN Films
• Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
• Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
• Growth of ZnO Nanorods on A-Plane (1120) Sapphire by Metal- Organic Vapor Phase Epitaxy
• Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
• (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
• Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
• Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
• Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
• Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
• Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
• Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
• Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
• Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
• ISCHEMIC PRECONDITIONING IMPROVES GLUTATHIONE STRESS AGAINST ISCHEMIA-REPERFUSION INJURY IN RAT HEARTS.
• Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
• Wavelength Dependence of InGaN Laser Diode Characteristics
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
• InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
• Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
• Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
• Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
• High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
• Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
• Ultraviolet GaN Single Quantum Well Laser Diodes
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
• Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
• Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
• Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
• Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
• Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
• Properties of Ambient Air Aged Thin Porous Silicon
• Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
• Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
• Effectiveness of a Short-Term Steroid Treatment on the Reduction in Goiter Size in Antithyroid Drug-Treated Patients with Graves' Disease
• Symmetricity of the Protocols Related to Oblivious Transfer
• Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
• Conditional Converge Cast
• Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
• Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
• Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
• Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
• Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
• Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
• 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Wavelength Dependence of InGaN Laser Diode Characteristics
• Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
• Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Crack-Free Thick AlN Films Obtained by NH
• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Optical Gain Spectra of a (0001) InGaN Green Laser Diode
• Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
• Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
• Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

もっと見る 閉じる

スポンサーリンク