Optical Gain Spectra of a (0001) InGaN Green Laser Diode
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概要
- 論文の詳細を見る
The optical gain properties of InGaN-based green (512 nm) laser diodes fabricated on (0001) GaN substrates are investigated. Fitting simulations to the experimental gain spectra provides a Gaussian inhomogeneous broadening of 95 meV, an optical confinement factor of 0.006, and an internal loss as low as {\sim}10/cm. The remarkable suppression of inhomogeneous broadening and internal loss compensate for the low optical confinement, leading to a low threshold current density of 2.75 kA/cm<sup>2</sup>. The suppressed inhomogeneity contributes to the highly linear gain increase with the injection carrier, while the low optical confinement results in a relatively low differential mode gain.
- 2013-12-25
著者
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Kim Yoon
Department Of Anesthesiology And Pain Medicine Chungnam National University Hospital
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Opto-Electronics Products Division, Nichia Corp.
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Nagahama Shin-ichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Ochi Yoshiaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kim Yoon
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Miyoshi Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation, Anan, Tokushima 774-8601, Japan
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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