Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
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概要
- 論文の詳細を見る
Recently, we performed reflectance spectroscopy for nonpolar and semipolar bulk GaN substrates under uniaxial stress and experimentally determined all the exciton deformation potentials in GaN. Our findings indicated a breakdown of the quasicubic approximation. Herein its impact on the electronic band structures in GaN/AlGaN strained quantum wells is theoretically investigated. The calculated results significantly differ from those using the widely accepted exciton deformation potentials. A simplified Hamiltonian is given to describe the in-plane optical polarization properties of GaN/AlGaN quantum wells.
- 2010-06-25
著者
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Mitsuru Funato
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yoichi Kawakami
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ryota Ishii
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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