Kaneta Akio | Department Of Electronic Science And Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Kim Yoon
Department Of Anesthesiology And Pain Medicine Chungnam National University Hospital
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kyono Takashi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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KANETA Akio
Department of Electronic Science and Engineering, Kyoto University
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Nagahama Shin-ichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Kim Yoon
Department Of Electronic Science And Engineering Kyoto University
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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FUNATO Mitsuru
Department of Electronic Science and Engineering, Kyoto University
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Opto-Electronics Products Division, Nichia Corp.
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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Enya Yohei
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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NISHIMURA Katsuhito
Department of Electronic Science and Engineering, Kyoto University
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Nishizuka Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Hashimoto Tsuneaki
Department Of Electronic Science And Engineering Kyoto University
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KIM Yoon-Seok
Department of Electronic Science and Engineering, Kyoto University
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Hira Takayuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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UENO Masaki
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAMURA Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Okamoto K
Department Of Electronic Science And Engineering Kyoto University
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Okamoto Koichi
Deparment Of Neurology Gunma University School Of Medicine
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IZUMI Tomoaki
Department of Electronic Science and Engineering, Kyoto University
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NARITA Yoshihito
Spectroscopic Division, JASCO Corporation
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INOUE Tsutomu
Spectroscopic Division, JASCO Corporation
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MUKAI Takashi
Department of Research and Development, Nichia Chemical Industries Ltd.
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NAGAHAMA Shin-ichi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Mukai Takashi
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
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Izumi Tomoaki
Department Of Electronic Science And Engineering Kyoto University
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ENYA Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NISHIZUKA Koji
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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HASHIMOTO Tsuneaki
Department of Electronic Science and Engineering, Kyoto University
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Narita Yoshihito
Spectroscopic Division Jasco Corporation
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Mukai Takashi
Department Of Research And Development Nichia Chemical Industries Ltd.
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Inoue Tsutomu
Spectroscopic Division Jasco Corporation
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KIM Yoon
Department of Electronic Science and Engineering, Kyoto University
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Mitsuru Funato
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yoichi Kawakami
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ryota Ishii
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Enya Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
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Kaneta Akio
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kim Yoon-Seok
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ochi Yoshiaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kim Yoon
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Miyoshi Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation, Anan, Tokushima 774-8601, Japan
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Hashimoto Tsuneaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Nakamura Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
著作論文
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical Gain Spectra of a (0001) InGaN Green Laser Diode
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)