Funato Mitsuru | Department Of Electronic Science And Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Kim Yoon
Department Of Anesthesiology And Pain Medicine Chungnam National University Hospital
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FUNATO Mitsuru
Department of Electronic Science and Engineering, Kyoto University
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kyono Takashi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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KANETA Akio
Department of Electronic Science and Engineering, Kyoto University
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Nagahama Shin-ichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Kim Yoon
Department Of Electronic Science And Engineering Kyoto University
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Opto-Electronics Products Division, Nichia Corp.
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藤田 茂夫
京都大学大学院工学研究科電子工学
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Takahashi Masayoshi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Narukawa Yukio
Nitride Semiconductor Research Laboratory Nichia Corporation
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UEDA Masaya
Department of Electronic Science and Engineering, Kyoto University
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Ueda Masaya
Department Of Electronic Science And Engineering Kyoto University
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Enya Yohei
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Matsuda Kazuhisa
Department Of Anesthesiology Kyushu University Faculty Of Medicine
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BANAL Ryan
Department of Electronic Science and Engineering, Kyoto University
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藤田 静雄
京大 国際融合創造セ
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Mukai Takashi
Kyoto Univ. Kyoto Jpn
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藤田 静雄
京都大学大学院工学研究科電子物性工学専攻所属
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Narukawa Yukio
Kyoto Univ. Kyoto Jpn
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Mukai Takashi
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Matsushita Toshio
Department Of Research And Development Nichia Chemical Industries Ltd
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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NISHIMURA Katsuhito
Department of Electronic Science and Engineering, Kyoto University
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Nishizuka Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Hashimoto Tsuneaki
Department Of Electronic Science And Engineering Kyoto University
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University
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KIM Yoon-Seok
Department of Electronic Science and Engineering, Kyoto University
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Funato Mitsuru
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Hira Takayuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Fujita Shiz
Kyoto Univ. Kyoto Jpn
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藤田 静雄
京都大学国際融合創造センター
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Ogawa Masahiro
Department of Cardiology, Fukuoka University School of Medicine
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HAYASHI Shigeo
Department of Applied Physics and Chemistry, University of Electro-Communications
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Fujita S
Department Of Electronic Science And Engineering Kyoto University
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Kondou Takeshi
Department of Internal Medicine, Fujita-Gakuen Health University School of Medicine
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Aoki Satoshi
Department of Cardiovascular center, Chiba-Hokusoh Hospital, Nippon Medical School
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UENO Masaki
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAMURA Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Fujita S
Hachinohe Inst. Technol. Aomori Jpn
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INOUE Daisuke
Department of I. M. S. E., Kagawa University
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Ishida T
Department Of Physics Faculty Of Science Ibaraki University
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NAGAHAMA Shin-ichi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Fujita Shigetaka
Department Of Electrical Engineering Hachinohe Institute Of Technology
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Aoki Satoshi
Department Of Biochemistry Faculty Of Science Josai University
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Aoki Satoshi
Department Of Electronic Science And Engineering Kyoto University
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ISHIDO Teruki
Department of Electronic Science and Engineering, Kyoto University
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Ogawa M
Sankyo Co. Ltd. Shiga‐ken Jpn
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Ogawa Masahiro
Department Of Applied Biological Science Faculty Of Agriculture Kagawa University
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Noda Susumu
Department Of Electrical Engineering Kyoto University
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Ishido Teruki
Department Of Electronic Science And Engineering Kyoto University
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HAYASHI Yuki
Department of Artificial Complex System Engineering Hiroshima University
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ENYA Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NISHIZUKA Koji
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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HAYASHI Keita
Department of Electronic Science and Engineering, Kyoto University
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NISHIURA Shotaro
Department of Electronic Science and Engineering, Kyoto University
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KOSUGI Takao
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Kosugi Takao
Nitride Semiconductor Research Laboratory Nichia Corporation
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Hayashi Keita
Department Of Electronic Science And Engineering Kyoto University
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HASHIMOTO Tsuneaki
Department of Electronic Science and Engineering, Kyoto University
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Kondou Takeshi
Department Of Electronic Science And Engineering Kyoto University
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Nishiura Shotaro
Department Of Electronic Science And Engineering Kyoto University
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Yamaguchi Atsushi
Research And Development Headquarters Rohm Co. Ltd.
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Ogawa Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Hayashi Shigeo
Department Of Electrical Engineering Kyoto University
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Hayashi Shigeo
Department Of Applied Physecs And Chemistry University Of Electro-communications
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Ogawa Masahiro
Department Of Anesthesiology Nihon University School Of Medicine
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Suda Jun
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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KIM Yoon
Department of Electronic Science and Engineering, Kyoto University
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Yamaguchi Atsushi
Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Minato, Tokyo 105-0002, Japan
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Mitsuru Funato
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yoichi Kawakami
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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ISHII Ryota
Department of Electronic Science and Engineering, Kyoto University
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Ryota Ishii
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Enya Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
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Kojima Kazunobu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneta Akio
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ujita Shinji
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Noda Susumu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kim Yoon-Seok
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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INOUE Daisuke
Department of Electronic Science and Engineering, Kyoto University
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Ochi Yoshiaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Akashi Yosuke
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Noda Susumu
Department of Electric Science and Engineering, Kyoto University
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Matsuda Kazuhisa
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kim Yoon
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Miyoshi Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation, Anan, Tokushima 774-8601, Japan
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Hashimoto Tsuneaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Nakamura Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
著作論文
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- Cubic ZnCdS Lattice-Matched to GaAs : A Novel Material for Short-Wavelength Optoelectronic Applications
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Crack-Free Thick AlN Films Obtained by NH
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Optical Gain Spectra of a (0001) InGaN Green Laser Diode
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)