Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy

概要

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We have developed dual-probe scanning near-field optical microscopy (SNOM) to visualize detailed carrier diffusion/recombination processes and applied it to the assessment of the local carrier dynamics in an InGaN single quantum well. It is clearly demonstrated that the carrier motion is strongly affected by the potential distribution within InGaN; potential ridges prevent carriers from diffusing outside them, whereas potential peaks cause carriers to travel a roundabout route around them. As a consequence, carriers anisotropically diffuse for several hundred nanometers along a specific direction toward a strong-photoluminescence domain. Thus, the dual-probe SNOM technique is a powerful nanoscopic tool, and may be versatile for characterizing photonic materials.
2010-10-25