Recombination Dynarmics in Zn_xCd_<1-x>S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-10-15
著者
-
藤田 茂夫
京都大学大学院工学研究科電子工学
-
Fujita Shiz
Kyoto Univ. Kyoto Jpn
-
Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
-
KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
-
FUJITA Shigeo
Department of Electrical Engineering Kyoto University
-
Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
-
Kawakami Y
Kyoto Univ. Kyoto Jpn
-
Kawakami Y
Ntt Corp. Yokosuka‐shi Jpn
-
Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
DUMONT Herve
Department of Electronic Science and Engineering, Kyoto University
-
Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
-
Dumont Herve
Department Of Electronic Science And Engineering Kyoto University:(present Address)universite Claude
-
Fujita Shizuo
Department Of Electrical Engineering Kyoto University
関連論文
- 低転位GaNの時間 : 空間分解光熱変換過程の観測(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 低転位GaNの時間-空間分解光熱変換過程の観測(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 5a-E-2 GaN量子ドットの多励起子効果
- 29a-K-3 II-VI族量子井戸構造の高密度励起下における時間分解分光
- 光MOVPE成長ZnSeの熱処理効果と評価
- Alg_3薄膜のキャリア伝導
- 時間分解分光によるInGaN量子井戸構造の発光ダイナミクス
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
- 時間分解近接場分光によるInGaN単一量子井戸の発光ダイナミクス(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 時間分解近接場分光によるInGaN単一量子井戸の発光ダイナミクス(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- InGaN系半導体デバイスの発光機構(半導体エレクトロニクス)
- InGaNレーザダイオード構造における光ゲイン生成ダイナミクス
- 顕微-時間分解分光法によるELO-GaNの輻射・非輻射再結合過程の評価
- 顕微-時間分解分光法によるELO-GaNの輻射・非輻射再結合過程の評価
- 25pK-6 InGaN中の低次元ナノ構造からの発光
- InGaN量子井戸発光デバイスのふく射再結合機構 (ワイドギャップ半導体とそのデバイス応用論文小特集)
- InGaN量子井戸発光デバイスにおける自然および誘導放出機構
- InGaN量子井戸発光デバイスにおける自然および誘導放出機構
- 青色発光GaNの微細構造と発光特性--なぜよく光るか?もっと光らせるには (日本電子顕微鏡学会第43回シンポジウム論文集--21世紀へ向けての新技術の展開--平成10年10月28日(水)〜30日(金),千葉大学けやき会館〔含 著者名索引〕) -- (新デバイス材料開発技術の最前線)
- InGaN量子井戸構造の強励起下における発光ダイナミクス
- InGaN量子井戸構造の強励起下における発光ダイナミクス
- III-V窒化物系とII-VI族系量子井戸の励起子光物性
- III-V窒化物系とII-VI族系量子井戸の励起子光物性
- Structural and Electrical Properties of Ta_2O_5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source
- Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure
- Organometallic Vapor-Phase Epitaxial Growth and Characterization of GaAs/Zn(S, Se) Multilayered Structures
- 真空蒸着法によるPbS_xSe_のエピタキシャル薄膜 : 融液成長と蒸着膜
- GaN/SiC基板上GaN系半導体のMBE成長
- Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser
- Zn(S,Se)-GaAsヘテロエピタキシャル成長と積層構造の作製 : エピタキシーI
- Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory
- Preparation of La-Modified Lead Titanate Film Capacitors and Influence of SrRuO_3 Electrodes on the Electrical Properties
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- InGaN単一量子井戸における双ピーク発光の成長温度依存性(レーザ・量子エレクトロニクス)
- バルクZnO基板の特性とホモエピタキシャル成長(半導体エレクトロニクス)
- 白色発光素子を用いた外科手術用照明ゴーグルの開発
- LEDの医療応用の可能性;ロボット手術での赤の演色性の改善の重要性
- 有機薄膜マルチ構造の真空作製と発光ダイナミクス
- Zn系薄膜の各種作製法とその諸特性
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- OME2000-52 有機EL薄膜へのC_添加効果
- 青色発行素子の行方
- MOVPE成長した立方晶GaNへの六方晶成分の混入
- MOVPE成長した立方晶GaNへの六方晶成分の混入
- 原子価不整合系の半導体へテロ構造におけるバンド不連続量の制御
- ZuSe/GaAsおよびGaAs/ZuSe有機金属気相成長と電気的特性の評価
- Comparative Study of Photoluminescence Dynamics of Tris (8-hydroxyquinoline) Aluminum-Based Organic Miltilayer Structures with Different Types of Energy Lineups
- Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures
- Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Growth of ZnO Nanorods on A-Plane (1120) Sapphire by Metal- Organic Vapor Phase Epitaxy
- Self-Assembled Three-Dimensional ZnO Nanosize Islands on Si Substrates with SiO_2 Intermediate Layer by Metalorganic Chemical Vapor Deposition : Semiconductors
- Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
- Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- 第5回「科学と生活のフェスティバル」の報告
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- Ferroelectric and Pyroelectric Properties of Ba_Pb_x Ti_(Hf_,Zr_)_O_3 Thin Films : Electrical Properties of Condensed Matter
- Ferroelectric SrxBa1-xNb2O6 Synthesized by YAG Laser Deposition
- Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films
- Preparation and Ferroelectric Properties of Ti-Site Substituted BaTiO_3 Thin Films
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Properties and Degradation of Polarization Reversal of Soft BaTiO_3 Ceramics for Ferroelectric Thin-Film Devices
- CdSe/ZnSe/ZnSSe 単一量子井戸における局在励起子の時間分解発光特性および青緑色発光ダイオードの作製
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- 光CVDによる電子薄膜材料の作製 (光に反応する新しい工業材料--その開発と利用の現状)
- ヨウ素輸送法による立方晶系ZnS単結晶の育成 : 気相成長
- ZnMgSSeのMOMBE成長と評価
- GaAs(110)面上への高品質ZnSe系半導体のMBE成長
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- ミストデポジション法による酸化マグネシウム(MgO)薄膜作製 : 大気圧下、低温成長への挑戦
- ZnOの基本物性と光デバイス応用
- 短波長半導体レーザーと発光ダイオードの構造と発光機構
- 半導体低次元系における励起子物性とレーザへの応用
- 有機/無機材料界面の問題
- ZnSe系量子井戸構造の成長と励起子ダイナミクス
- II-VI族半導体ヘテロ構造の設計と作製
- 二源蒸着法によるPbSxSe1-x薄膜の製作