Organometallic Vapor-Phase Epitaxial Growth and Characterization of GaAs/Zn(S, Se) Multilayered Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-15
著者
-
Fujita S
Kyoto Univ. Kyoto Jpn
-
Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
-
Fujita S
Department Of Electronic Science And Engineering Kyoto University
-
FUJITA Shigeo
Department of Electrical Engineering Kyoto University
-
Maruo Seiji
Department Of Electrical Engineering Kyoto University
-
Fujita S
Hachinohe Inst. Technol. Aomori Jpn
-
Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
-
TSUJI Osamu
R & D Division, Samco International Inc.
-
Murawala Prakash
Department of Electrical Engineering, Kyoto University
-
Murawala P
Research & Development Center Samco International Incorporated
-
Tsuji O
Samco International Co. Ltd.
-
Fujita Shizuo
Department Of Electrical Engineering Kyoto University
-
Tsuji O
Samco International Inc. Kyoto Jpn
関連論文
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
- Structural and Electrical Properties of Ta_2O_5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source
- Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure
- Organometallic Vapor-Phase Epitaxial Growth and Characterization of GaAs/Zn(S, Se) Multilayered Structures
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
- Fabrication of InP Submicron Pillars for Two-Dimensional Photonic Crystals by Reactive Ion Etching
- Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled Plasma
- Materials Characterization of Plasma Deposited Copolymer Using CFC-113 With C_2H_4 Monomer
- 30p-PSA-23 偏極移行量D_(0°)測定による原子核のスピン・アイソスピン励起
- 29p-G-2 中性子スピン分光器(Neutron Polarimeter NPOL II)
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory
- Preparation of La-Modified Lead Titanate Film Capacitors and Influence of SrRuO_3 Electrodes on the Electrical Properties
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- 有機薄膜マルチ構造の真空作製と発光ダイナミクス
- Zn系薄膜の各種作製法とその諸特性
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- OME2000-52 有機EL薄膜へのC_添加効果
- MOVPE成長した立方晶GaNへの六方晶成分の混入
- Comparative Study of Photoluminescence Dynamics of Tris (8-hydroxyquinoline) Aluminum-Based Organic Miltilayer Structures with Different Types of Energy Lineups
- Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures
- Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Growth of ZnO Nanorods on A-Plane (1120) Sapphire by Metal- Organic Vapor Phase Epitaxy
- Self-Assembled Three-Dimensional ZnO Nanosize Islands on Si Substrates with SiO_2 Intermediate Layer by Metalorganic Chemical Vapor Deposition : Semiconductors
- Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions
- Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
- Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- 第5回「科学と生活のフェスティバル」の報告
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- Ferroelectric and Pyroelectric Properties of Ba_Pb_x Ti_(Hf_,Zr_)_O_3 Thin Films : Electrical Properties of Condensed Matter
- Ferroelectric SrxBa1-xNb2O6 Synthesized by YAG Laser Deposition
- Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films
- Preparation and Ferroelectric Properties of Ti-Site Substituted BaTiO_3 Thin Films
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Properties and Degradation of Polarization Reversal of Soft BaTiO_3 Ceramics for Ferroelectric Thin-Film Devices
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- Sendai Virus-Mediated Gene Delivery into Hepatocytes via Isolated Hepatic Perfusion(Miscellaneous)
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- Integrated Optical Pickup with Highly Sensitive Servo Signal Detection : Head Technology
- Integrated Optical Pickup with Highly Sensitive Servo Signal Detection
- A wave equation describing the generation of field-aligned current in the magnetosphere
- Ground magnetic perturbations associated with the standing toroidal mode oscillations in the magnetosphere-ionosphere system
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- A New Parameter for Assessing Postoperative Recovery of Physical Activity Using an Accelerometer
- Epitaxial Solution Growth of ZnTe on ZnSe
- Preparation of ZnSe-ZnTe Heterojunctions by Liquid-Phase Epitaxial Growth
- Blue Electroluminescence in ZnSe-ZnTe Heterojunctions
- A Case of Noninvasive Ductal Carcinoma Arising in Malignant Phyllodes Tumor
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Self-Organizing Process of Moderately Strained Zn_Cd_xSe Layer Grown on GaAs(110) by Molecular Beam Epitaxy
- Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- Cubic ZnCdS Lattice-Matched to GaAs : A Novel Material for Short-Wavelength Optoelectronic Applications
- ミストデポジション法による酸化マグネシウム(MgO)薄膜作製 : 大気圧下、低温成長への挑戦
- ZnOの基本物性と光デバイス応用
- Surface Treatment of Indium-Tin-Oxide Substrates and Its Effects on Initial Nucleation Processes of Diamine Films
- Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source
- Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors
- Growth of ZnS by Metalorganic Chemical Vapor Deposition
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe
- Properties of CdTe p-n Diodes Prepared by Al Vapor-Diffusion
- Magnetospheric Cavity Resonance Oscillations with Energy Flow across the Magnetopause
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films
- Gas-Phase and Surface Reactions in Xenon Lamp-Assisted Organometallic Vapor-Phase Epitaxy of ZnSe : Condensed Matter
- Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C_ Thin Films
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions
- Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors