Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
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概要
- 論文の詳細を見る
Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlying MBE-ZnO at 1000℃ in N_2 which resulted in an atomically flat surface. In photoluminescence at 15 K, the 3 meV line width of the emission from donor-bound-excitons (D^0X) and the observation of the fourth phonon replica of the emission from free-excitons (EX) have demonstrated the high potential of MOVPE growth of ZnO toward optical applications.
- 社団法人応用物理学会の論文
- 2001-07-01
著者
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Kawanishi Toru
Department Of Electronic Science And Engineering Kyoto Univerity
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Kawanishi Toru
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences University Of Tokyo:(present
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Ogata Ken-ichi
Venture Business Laboratory Kyoto Univerity
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MAEJIMA Keigou
Department of Electronic Science and Engineering, Kyoto University
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SAKURAI Keiichiro
Department of Electronic Science and Engineering, Kyoto University
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Sakurai Keiichiro
Department Of Electronic Science And Engineering Kyoto Univerity
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Maejima K
Kyoto Univ. Kyoto Jpn
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Maejima Keigou
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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