Deep Trap States in Si_3N_4 Layer on Si Substrate
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概要
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Charge transfer processes in metal-nitride-semiconductor (MNS) diodes are investigated. The spatial and energetic distributions of the trap state density in Si_3N_4 layers on Si substrates are determined by measuring the amount of transferred charge in MNS diodes. We apply to MNS diodes relatively wide and low-pulsed voltages so that trap states spatially distributed deep in the Si_3N_4 layer can be examined, and we analyze the electronic properties of the trap states without any pre-assumptions as made in past analyses. The results show that (i) charging and discharging processes are mainly due to direct tunneling of electrons, (ii) donor-like trap states lie near the mid-gap of the Si_3N_4 layer on an Si substrate, (iii) they are distributed uniformly in the region of 26-44 Å from the Si/Si_3N_4 interface, and (iv) their density is 3×10^<19> cm^<-3>.
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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NISHIHARA Michinori
Department of Electrical Engineering, Kyoto University
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HOI Won-Lon
Department of Electrical Engineering, Kyoto University
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Hoi Won-lon
Department Of Electrical Engineering Kyoto University
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Nishihara Michinori
Department Of Electrical Engineering Kyoto University
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