Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
スポンサーリンク
概要
- 論文の詳細を見る
Nonrandomness in the atomic arrangement impedes the motion of a dislocation. The extra resolved shear stress to move a dislocation, τ, is calculated for III-V ternary alloy semiconductors on the basis of a thermodynamical analysis where the strain energy is considered as the mixing enthalpy. The τ is large for a large lattice-mismatched alloy, e.g., InGaAs while negligible for a closely lattice-matched alloy, e.g., GaAlAs. The hardening in the alloy with the strain due to lattice mismatch can be significant at high temperatures or during the operation of devices and thus could elongate the device lifetime.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
-
Ichimura Masaya
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
関連論文
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- New Realization Method for Three-Dimensional Photonic Crystal in the Optical Wavelength Region: Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region : Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Growth Temperature Dependence of Electrical Properties of LPE-Al_Ga_Sb Characterized by p-n Junction Current Transport
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Properties of Chemically Vapor-Deposited Amorphous SiN_x Alloys
- Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- Electrical and Optical Properties of Ag/p-InP/p-InGaAs Schottky Photodiodes
- Fabrication of 1-μm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching
- Calculated Electron Mobility of Two-Dimensional Electrons in AIInAs/InGaAs and InP/InGaAs Single Heterostructures
- Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Optical Flip-Flop and Astable Multivibrator Functions by Vertical and Direct Integration of Heterojunction Phototransistors and Laser Diodes
- Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells
- Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
- Temperature Dependence of Charge Transfer in Metal-Nitride-Semiconductor Diode Structure
- Deep Trap States in Si_3N_4 Layer on Si Substrate
- Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Effects of Magnetic Field on Electron Transfer and Velocity-Field Characteristic in Gallium Arsenide
- Growth of ZnS by Metalorganic Chemical Vapor Deposition
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- Photochemical Deposition of Patterned Gold Thin Films
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid-Solutions
- Liquid-Crystal Electrothermo-Optic Effects and Their Application to Display : B-3: DISLLAY DEVICES
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- Composition and Chemical Bonds in Silicon Nitride by SiH_4-N_2 Gas Mixture Plasma CVD
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
- Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques
- As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers
- lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- 2-D Simulation and New Structures of Heterojunction Phototransistor for Higher Optical Amplification in Optoelectronic Integrated Devices
- Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition
- Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current
- Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells
- Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
- Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
- Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions
- Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition From Aqueous Solutions
- Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Electrochemical Deposition of GaSxOy Thin Films
- Deposition of Cd1-xZnxS ($0 \le x \le 1$) Alloys by Photochemical Deposition
- Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
- Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts
- Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
- Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate