Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-15
著者
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Hirano M
Jst‐erato Kawasaki Jpn
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Hirano M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hirano Makoto
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HIRANO Masashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ARAI Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Arai E
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Arai E
Nagoya Inst. Technol. Nagoya Jpn
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Ichimura M
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Hirano Masashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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