Photoluminescence Study of Al_xGa_<1-x>Sb Grown by Liquid-Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-08-20
著者
-
Wada T
Department Of Materials Chemistry Ryukoku University
-
ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
-
Wada Takao
Department Of Lnternal Medicine School Of Medicine Keio University
-
Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
KITAMURA Noboru
Department of Internal Medicine I Nihon University School of Medicine
-
Wada T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Kitamura Norihisa
Department Of Physics Aoyama-gakuin University
-
Kitamura Norihisa
Department Of Physics College Of Science And Engineering Aoyama Gakuin University
-
Wada T
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Usami A
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Usami Akira
Department Of Electronics Nagoya Institute Of Technology
-
Kitamura N
Aist‐miti Osaka Jpn
-
UEKITA Hiroshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
-
HIGUCHI Kenji
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
-
Kitamura Noboru
Department Of Chemistry Faculty Of Science Hokkaido University
-
Ichimura M
Nagoya Inst. Technol. Nagoya Jpn
-
Higuchi Kenji
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Uekita Hiroshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
-
Usami Akira
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
USAMI Akira
Department of Applied Chemistry, Seikei University
関連論文
- THE MECHANISM OF OLIGURIA IN ACUTE RENAL FAILURE: A FUNCTIONAL STUDY USING MICRODISSECTED NEPHRONS : PROCEEDINGS OF THE 38TH ANNUAL MEETING OF THE JAPANESE CIRCULATION SOCIETY
- Chemical and Structural Characterization of Cu(In, Ga)Se_2/Mo Interface in Cu(In, Ga)Se_2 Solar Cells
- Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application
- Surface Characterization of Chemically Treated Cu(In, Ga)Se_2 Thin Films
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Control of Surface Recombination of Si Wafers by an External Electrode
- Multibacterial Sepsis in an Alcohol Abuser with Hepatic Cirrhosis
- Subclinical renal tubular acidosis in patients with primary and secondary Sjogren's syndrome : a possible marker of disease progression
- Electrical and Optical Properties of Cds Films Grown by Photochemical Deposition From Aqueous Solutions
- Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices
- Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen
- High Energy Spectroscopy of Thin Films of Chalcopyrite Structure Cu-In-Se and Related Materials
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- RENAL HEMODYNAMIC CHANGES ASSOCIATED WITH ANTIDIURETIC ACTIONS OF CHLORPROPAMIDE, CLOFIBRATE AND THIAZIDE IN DIABETES INSIPIDUS
- THE RELATION OF HYPERKALEMIA TO THE ELECTROCARDIOGRAPHIC CHANGES CAUSED BY ACIDEMIA
- The Renin-Angiotensin-Aldosterone System in Juvenile Hypertension : Part II
- Serum Angiotensinase Activity in Juvenile Hypertension
- 95) Statistical Studies of Juvenile Hypertension
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- Fluorometric and Coulometric Analyses of Electron Transfer across Microdroplet/Water Interface
- Physical Vapor Deposition of Hexagonal and Tetragonal CuIn_5Se_8 Thin Films
- Microstructure of Cu(In,Ga)Se_2 Films Deposited in Low Se Vapor Pressure
- MoSe_2 layer formation at Cu(In, Ga)Se_2/Mo Interfaces in High Efficiency Cu(In_Ga_x)Se_2 Solar Cells
- Preparation of Device-Quality Cu(In, Ga)Se_2 Thin Films Deposited by Coevaporation with Composition Monitor
- Preparation of Ordered Vacancy Chalcopyrite-Type CuIn_3Se_5 Thin Films
- Annealing Effect of High-T_c Superconducting Y(Ba_Sr_x)_2Cu_3O_ Ceramics
- Preparation Chalcopyrite-type Semiconductor Films by Sulfuration of Oxide Films
- Association of 14-3-3 ε gene haplotype with completed suicide in Japanese
- Phases and Third-Order Optical Nonlinearities in Tetravalent Metallophthalocyanine Thin Films
- Third-Order Nonlinear Optical Properties in Soluble Phthalocyanines with Tert-Butyl Substituents
- Third-Order Optical Nonlinearities in Porphyrins with Extended π-Electron Systems
- ESR Centers in Silicon Monoxide
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Influence of Deformation of Smectic Layer Structure on Dielectric Behavior of Ferroelectric Liquid Crystal
- Ferroelectric Liquid Crystal Mixtures Containing Chiral Pyranose Compounds for Response-Voltage Minimum Mode
- Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals
- Models of Molecular Orientation in Surface-Stabilized Ferroelectric Liquid Crystals with High-Pretilt Aligning Film
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
- Excitation Frequency Effects on Stabilized Efficiency of Large-Area Amorphous Silicon Solar Cells Using Flexible Plastic Film Substrate
- Working Pressure Effects on Deposition of Large-Area Microcrystalline Silicon Films on Flexible Plastic Substrate at 130℃ : Semiconductors
- Excitation Frequency Effects on Large-Area Hydrogenated Amorphous Silicon Film Deposition Process Using Flexible Film Substrate : Semiconductors
- X-Ray Photoelectron Spectroscopy Study of a Self-Assembled Monolayer of Thiophene Thiol
- Fabrication of Nanometer-Scale Vertical Metal-Insulator-Metal Tunnel Junctions Using a Silicon-on-Insulator Substrate
- Fabrication of Nanometer-Scale Vertical MIM Tunnel Junctions Using a Double-Layered Inorganic Resist
- Preparation of Polythiphene Copolymer for Third Order Nonlinear Optics
- SiO_2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
- SiO_2/Poly-Si Multilayered Electron Beam Resist Process for Fabrication of Ultrasmall Tunnel Junctions
- Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
- Novel Switching with Gray Scale in Surface-Stabilized Ferroelectric Liquid Crystal Devices
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Search for Midgap Levels in 3C-SiC Grown on Si Substrates
- Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
- Electron Beam Doping by Superdiffusion in Unirradiated Regions (X
- Substitution Effect of Sr for Ba of High-T_c Superconducting YBa_2Cu_3O^ Ceramics
- Vapor Growth of AN-Doped ZnTe by the Closed-Tube Method
- Chemical Depth Profile of Thermal Oxide on GaSb Using XPS Method
- Electrical and Photoelectrical Characterization of n・Ga_xAl_Sb-p・GaSb Heterojunction
- Changes of DLTS Spectrum in n-Si due to 7-10 MeV Electron-Irradiation
- Vapor Growth of Te-Doped Ga_xAl_Sb on GaSb
- Vapor-Phase Growth of Te-Doped GaSb
- Vapor Phase Growth of Ga_xAl_1__xSb
- Low Temperature Vapor Growth of Zinc Telluride
- Spectroscopic and Excited-state Properties of Triarylboranes and Their Transition-metal Complexes
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- X-Rat Photoelectron Spectra of an Electron-Beam Oxide Layer on GaSb
- Direct Comparison of Quantized Hall Resistance between Si-MOSFET and GaAs/AlGaAs Heterostructure Devices on the Same Sample Holder
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- ESCAPE FROM SODIUM AND POTASSIUM RETAINING ACTIONS OF ASPIRIN-LIKE DRUGS USED IN A PATIENT WITH BARTTER'S SYNDROME
- Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
- The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film
- A BASIC STUDY OF THE HANSSEN TECHNIQUE FOR EVALUATION OF SINGLE NEPHRON GLOMERULAR FILTRATION RATE
- Electrochromic Behavior of Amorphous Copperphthalocyanine Thin Films
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Optimum B^+ Dose in S/D Regions to Improve Schottky p-Channel MOSFET Characteristics
- Improvement of Schottky MOSFET Characteristics by B^+ Implantation in Active Region
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Optical Absorption and Modification of Band Edges in Irradiated GaP
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Estimation of Body Water and Salt Contents from Plasma Sodium, Protein Concentrations, and Hematocrit
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Heteroepitaxial Growth of ZnTe on GaSb
- Negative Resistance Due to Impact Ionization in Irradiated Germanium
- Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
- Energy Spectra of Displaced Atoms in High-Energy Electron-Irradiated Si: Views on Electron Beam Doping and Damage Factor