Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface

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概要

• 論文の詳細を見る

• The annealing of the paramagnetic defects, which are created near the surface of silicon when it is crushed into powder, was investigated by measuring the paramagnetic resonance signal strength. The centers are annealed in two stages; one is at lower temperatures below 400℃. Through this stage the paramagnetic center is annealed with the activation energy 1.4eV, in agreement with that for annealing of Si-A centers in an irradiated Si (pulled). The Si-A centers are formed by the capture of an oxygen atom (or ion) adsorbed on the surface in a vacancy introduced by mechanical damage in the same way as the case of the irradiated Si. This type of center is destroyed by diffusion of an oxygen atom into Si and forming an O_2-vacancy during the heat treatment below 400℃. The annealing behaviour of the paramagnetic centers at higher temperatures is found to resemble that in the irradiated Si due to the formation of an O_3-vacancy complex, which is formed by the successive diffusion of an oxygen atom adsorbed on the surface.

• 社団法人日本物理学会の論文
• 1967-04-05

著者

• MIZUTANI Teruyoshi

  Department of Electrical Engineering, Nagoya University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Wada Takao

  Department Of Lnternal Medicine School Of Medicine Keio University

• Wada Takao

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Wada Takao

  Department Of Electronic Engineering Faculty Of Engineering Nagoya University

• Mizutani Teruyoshi

  Department Of Electrical Engineering Aichi Institute Of Technology

• Mizutani Teruyoshi

  Department Of Electronic Engineering Faculty Of Engineering Nagoya University

• ARIZUMI Tetsuya

  Department of Electronic Engineering, Faculty of Engineering, Nagoya University

• Arizumi Tetsuya

  Department Of Electronic Engineering Faculty Of Engineering Nagoya University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Wada Takao

  Department Of Applied Electronics Daido Institute Of Technology

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Mizutani Teruyoshi

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan

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