Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• Kohno Atsushi

  Department of Radiology, Kobe University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Kohno A

  Hiroshima Univ. Higashi-hiroshima Jpn

• Kohno A

  Operative Dentistry I Tsurumi University School Of Dental Medicine

• Kohno Atsushi

  Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki S

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• DEKI Hidenori

  Department of Electrical Engineering, Hiroshima University

• NAKAGAWA Kouji

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Deki Hidenori

  Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Electrical

• Hirose M

  Materials Research Center Tdk Corporation

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Nakagawa Kouji

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Kohno Atsushi

  Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jounan-ku, Fukuoka 814-0180, Japan

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

関連論文

• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• OE-379 Characterization of Vulnerable Plaques in Coronary Artery by Using Three-dimensional Spiral MRI Technique ; Comparing with the Intravascular Ultrasound Studies(MRI/MRA(01)(I),Oral Presentation(English),The 72nd Annual Scientific Meeting of the Japa
• THE LIMITATION AND USEFULNESS OF CT SCAN, NMR-CT AND ANGIOGRAPHY FOR EXAMINATION OF DISSECTING ANEURYSMA : Surgery, Platelet and Thrombosis : FREE COMMUNICATIONS (III) : PROCEEDINGS OF THE 49th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Luminescence from Thermally Oxidized Porous Silicon
• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• Amorphous Silicon Static Induction Transistor
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Malignant mucosal melanoma of the eustachian tube
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• Defect Reduction Treatment for Plasma-Tetraethylorthosilicate-SiO_2 by High-Pressure H_2O Vapor Heat Treatment
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Retroperitoneal Squamous Cell Carcinoma:Metastasis from Uterine Endometrial Carcinoma?
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
• Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
• Anomalous Behaviour of Silicon Single-Crystals Observed by X-Ray Diffraction
• IMMUNOHISTOPATHOLOGICAL ANALYSIS OF IMMUNE-COMPLEXES RELATED TO ANTI-DNA ANTIBODIES IN THE SERUM AND ON THE GLOMERULUS IN MRL/1 MICE
• Newly Developed Curing Unit Using Blue Light-Emitting Diodes
• Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
• Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
• Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors

もっと見る 閉じる

スポンサーリンク