Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
スポンサーリンク
概要
- 論文の詳細を見る
Saturated perfluorocarbons (PFCs) such as CF4, C2F6, C3F8 and c-C4F8 are used as dry-etch gases in the semiconductor industry. They have a significant greenhouse effect. Unsaturated fluorocarbons can be alternated with these PFCs because of their easy decomposition in the atmosphere. The authors have diagnosed the plasmas generated from straight-chain unsaturated gases such as C3F6, C4F6, C4F8 and C5F8 in an inductively coupled plasma reactor and have compared their etch properties. It was found that high selectivity has been obtained in a C4F6 or C5F8 plasma without mixing any specific gases. Fine contact holes of approximately 100 nm in diameter also have been obtained using C4F6 or C5F8 with or without adding Ar or O2. These good etch properties of C4F6 and C5F8 have been achieved as a consequence of the appropriate balance between the lower density of fluorocarbon polymers and the dominant etching species CF+ with lower etching efficiency. It can be concluded that C4F6 and C5F8 can be used as PFC replacements for the dry-etch gas.
- 2003-09-15
著者
-
Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
-
AOYAMA Hirokazu
Chemical Division, DAIKIN Industries, Ltd.
-
Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
-
Itano Mitsushi
Chemical Division Daikin Industries Ltd.
-
Nakamura Shingo
Chemical Division Daikin Industries Ltd.
-
Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2, Kagamiyama, Higashi-hiroshima, Hiroshima 739-8527, Japan
-
Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
-
Yokoyama Shin
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2, Kagamiyama, Higashi-hiroshima, Hiroshima 739-8527, Japan
-
Aoyama Hirokazu
Chemical Division, DAIKIN Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
-
Itano Mitsushi
Chemical Division, DAIKIN Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
関連論文
- Imprint Property of Optical Mach-Zehnder Interferometer Using Sputter Deposited (Ba,Sr)TiO_3 at Low Temperature
- Low Temperature Fabrication of Monolithic Mach-Zehnder Optical Modulator on Silicon using Sputtered (Ba,Sr)TiO_3 and Mechanism of Transient Response
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba_Sr_TiO_3 Thin Films
- Structural and Optical Properties of Electro-Optic Material : Sputtered (Ba,Sr)TiO_3
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- New RAM-bus Memory System with Interchip Optical Interconnection
- Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
- Medium-Energy Ion Spectroscopy Using Ion Implanter
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
- Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering
- Influence of Organic Contaminant on Trap Generation in Thin SiO_2 of Metal-Oxide-Semiconductor Capacitors
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Design of Optically Coupled Three-Dimensional Content Addressable Memory
- Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)
- Coupled Monte Carlo-Energy Relaxation Analysis of Hot Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistor's
- Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
- Conduction Mechanism in Extremely Thin Poly-Si Wires : Width Dependence of Coulomb Blockade Effect
- Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires
- Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation
- Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface
- Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface
- Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
- Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
- Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors
- Optical Modulator Using Metal-Oxide-Semiconductor Type Si Ring Resonator
- Magneto-optic Effect in Amorphous Bi_3Fe_5O_ Waveguide Sputtered at Room Temperature
- Photoelastic Effect in Silicon Ring Resonator
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference
- Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators
- Detection of Antigen--Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein
- A Study of Mach--Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Si Ring Optical Resonators for Integrated On-Chip Biosensing
- Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor
- Fabrication of High-Density Diamond Nanotips by Electron Beam Lithography
- Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
- Investigation of Surface Contamination on Silicon Oxide after Hydrofluoric Acid Etching by Noncontact Capacitance Method
- Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
- Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
- Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
- Compact Branched Optical Waveguides Using High-Index-Contrast Stacked Structure
- Stacked Optical Branched Waveguides for Optical Interconnection on Si Chips
- Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System
- Precise Depth Profiling of Sub-keV Implanted Arsenic
- Function of Phase Switch Layer for Ultra Shallow Junction Formation by Green Laser Annealing
- Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si
- Race-Track Optical Ring Resonators with Groove Coupling
- Design and Simulation of Ring Resonator Switches using Electro-Optic Materials
- Compact Multi-Mode Optical Ring Resonators for Interconnection on Si Chips
- Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate
- Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology
- Contact-Hole Etching with NH3-Added C5F8 Pulse-Modulated Plasma
- SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect
- Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation (Special Issue : Solid State Devices and Materials (2))
- Design and Simulation of Ring Resonator Optical Switches using Electro-Optic Materials
- Anomalous Behavior of Interface Traps of Si MOS Capacitors Contaminated with Organic Molecules
- Magneto-Optic Effect in Amorphous Bi3Fe5O12 Waveguides Sputtered at Room Temperature
- Optically Interconnected Kohonen Net for Pattern Recognition
- Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Photoelastic Effect in Silicon Ring Resonators
- Evaluation of Front-Opening Unified Pod with Attached UV/Photocatalyst Cleaning Unit
- Effect of Light Irradiation on Native Oxidation of Silicon Surface
- Imprint Property of Optical Mach–Zehnder Interferometers Using (Ba,Sr)TiO3 Sputter-Deposited at 450 °C
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors
- Compact Multimode Optical Ring Resonators for Interconnection on Silicon Chips
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Amorphous Ba0.7Sr0.3TiO3 Thin Films
- Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO3
- Transient Response in Monolithic Mach–Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon
- Effect of H2 Addition during Cu Thin-Film Sputtering