Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference
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概要
- 論文の詳細を見る
A Si ring optical modulator, where a low operation voltage is expected, is proposed. In this device, p/n junctions are arranged along the circumference of the ring resonator. By simulation, the propagation loss ${<}5$ dB/cm and $1\times 10^{17}$--$5\times 10^{17}$ cm-3 carrier concentration are estimated to be necessary, to obtain ${>}95$% modulation at 1 V, where the length of the p/n region is 150 nm. Multi-interference occurs between the light reflections at the interfaces of neutral and depletion regions. When the resonance wavelength of multi-interference is equal to that of the ring resonator, the effect of multi-interference is simulated. Moreover, it is shown that the multi-interference effect is not the problem when a different resonance wavelength is used as an input optical signal.
- 2011-04-25
著者
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Ding Hao
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Amemiya Yoshiteru
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Ding Hao
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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