Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
A microscopic optical waveguide fabrication technique on silicon substrates at low temperatures using a fluorinated polyimide (FPI) is developed for application in an optically interconnected LSI. Propagation loss decreases to about 1.0 dB/cm in the miniaturized FPI waveguide with a core size of $1.5\times 10$ μm2 made on a thermal oxide film and to about 4.8 dB/cm in a waveguide with a core size of $1\times 10$ μm2 made on spin-on-glass. Furthermore, the FPI waveguides are also fabricated on metal–oxide–semiconductor (MOS) capacitors, and the influence of the waveguide fabrication including a plasma etching process on the underlying MOS capacitors is evaluated by examining the time-dependent dielectric breakdown characteristics. It is observed that plasma damage in the dry etching process may not be so large, but the damage at the spin-coating step for spin-on-glass for clad layer formation on a MOS capacitor is relatively large in the FPI waveguide fabrication process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
-
Tabei Tetsuo
Research Center For Nanodevices And Systems (rcns) Hiroshima University
-
Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
-
Maeda Kazuhiko
Central Glass Co. Ltd
-
Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
関連論文
- Imprint Property of Optical Mach-Zehnder Interferometer Using Sputter Deposited (Ba,Sr)TiO_3 at Low Temperature
- Low Temperature Fabrication of Monolithic Mach-Zehnder Optical Modulator on Silicon using Sputtered (Ba,Sr)TiO_3 and Mechanism of Transient Response
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba_Sr_TiO_3 Thin Films
- Structural and Optical Properties of Electro-Optic Material : Sputtered (Ba,Sr)TiO_3
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- New RAM-bus Memory System with Interchip Optical Interconnection
- Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
- Medium-Energy Ion Spectroscopy Using Ion Implanter
- An Optimized Silicidation Technique for Source and Drain of FINFET
- New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
- Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering
- Influence of Organic Contaminant on Trap Generation in Thin SiO_2 of Metal-Oxide-Semiconductor Capacitors
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Design of Optically Coupled Three-Dimensional Content Addressable Memory
- Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)
- Coupled Monte Carlo-Energy Relaxation Analysis of Hot Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistor's
- Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
- Conduction Mechanism in Extremely Thin Poly-Si Wires : Width Dependence of Coulomb Blockade Effect
- Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires
- Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation
- Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
- Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors
- Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes
- Optical Modulator Using Metal-Oxide-Semiconductor Type Si Ring Resonator
- Magneto-optic Effect in Amorphous Bi_3Fe_5O_ Waveguide Sputtered at Room Temperature
- Photoelastic Effect in Silicon Ring Resonator
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference
- Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators
- Detection of Antigen--Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein
- A Study of Mach--Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Si Ring Optical Resonators for Integrated On-Chip Biosensing
- Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor
- Mobility and Number Fluctuations in MOS Structures
- Fabrication of High-Density Diamond Nanotips by Electron Beam Lithography
- Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
- Investigation of Surface Contamination on Silicon Oxide after Hydrofluoric Acid Etching by Noncontact Capacitance Method
- Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
- Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
- Compact Branched Optical Waveguides Using High-Index-Contrast Stacked Structure
- Stacked Optical Branched Waveguides for Optical Interconnection on Si Chips
- Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System
- Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si
- Race-Track Optical Ring Resonators with Groove Coupling
- Design and Simulation of Ring Resonator Switches using Electro-Optic Materials
- Compact Multi-Mode Optical Ring Resonators for Interconnection on Si Chips
- Field-Shield Trench Isolation with Self-Aligned Field Oxide
- Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate
- Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology
- Contact-Hole Etching with NH3-Added C5F8 Pulse-Modulated Plasma
- SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect
- Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation (Special Issue : Solid State Devices and Materials (2))
- Control of Subthreshold Characteristics of Narrow-Channel Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Transistor with Additional Side Gate Electrodes
- Design and Simulation of Ring Resonator Optical Switches using Electro-Optic Materials
- Anomalous Behavior of Interface Traps of Si MOS Capacitors Contaminated with Organic Molecules
- Magneto-Optic Effect in Amorphous Bi3Fe5O12 Waveguides Sputtered at Room Temperature
- Potentiality of Metal-Oxide-Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption
- Optically Interconnected Kohonen Net for Pattern Recognition
- Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Photoelastic Effect in Silicon Ring Resonators
- Evaluation of Front-Opening Unified Pod with Attached UV/Photocatalyst Cleaning Unit
- Effect of Light Irradiation on Native Oxidation of Silicon Surface
- Imprint Property of Optical Mach–Zehnder Interferometers Using (Ba,Sr)TiO3 Sputter-Deposited at 450 °C
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors
- Compact Multimode Optical Ring Resonators for Interconnection on Silicon Chips
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Amorphous Ba0.7Sr0.3TiO3 Thin Films
- Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO3
- Transient Response in Monolithic Mach–Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon
- Optimized Silicidation Technique for Source and Drain of Fin-Type Field-Effect Transistor
- Proposal of a Metal–Oxide–Semiconductor Silicon Optical Modulator Based on Inversion-Carrier Absorption
- Mobility and Number Fluctuations in MOS Structures
- Effect of H2 Addition during Cu Thin-Film Sputtering