Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• SHIBAHARA Kentaro

  Research Center for Nanodevices and Systems, Hiroshima University

• Okuyama Kiyoshi

  Research Center For Nanodevices And Systems Hiroshima University

• Kobayashi Kei

  Research Center For Nanodevices And Systems Hiroshima University

• SUNAMI Hideo

  Research Center for Nanodevices and Systems, Hiroshima University

• ETO Takanori

  Research Center for Nanodevices and Systems, Hiroshima University

• Eto Takanori

  Research Center For Nanodevices And Systems Hiroshima University

• Okuyama Kiyoshi

  Research Center For Nanodevice And Systems Hiroshima University

• Shibahara Kentaro

  Research Center For Nanodevices And Systems Hiroshima University

• Sunami Hideo

  Research Center For Nanodevice And Systems Hiroshima University

• Shibahara Kentaro

  Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan

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