Shibahara Kentaro | Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan

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著作論文

High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface
Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface
Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
Precise Depth Profiling of Sub-keV Implanted Arsenic
Function of Phase Switch Layer for Ultra Shallow Junction Formation by Green Laser Annealing
Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate
Pd_2Si Fully-Silicided Gate : Kinetics of Silicide Formation and Workfunction Tuning
Ultra-Shallow Junction Formation with Antimony Implantation(Special Issue on Advanced Sub-0.1μm CMOS Devices)
Gate-extension overlap control by Sb tilt implantation
Optically Interconnected Kohonen Net for Pattern Recognition
Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As+ Implantation
Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate
Formation Kinetics and Work Function Tuning of Pd2Si Fully Silicided Metal Gate
Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process
Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
Ultra-Shallow Junction Formation by Green-Laser Annealing with Light Absorber
Effect of Pulse Duration on Formation of Ultrashallow Junction by Excimer Laser Annealing
High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n+/p Junctions by Heat-Assisted Excimer Laser Annealing

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