Terai Masayuki | Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
スポンサーリンク
概要
- 同名の論文著者
- Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
関連著者
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Terai Masayuki
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kentaro Shibahara
Research Institute for Nanodevice and Bio Systems (RNBS), Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hase Takashi
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hirohito Watanabe
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Setsu Kotsuji
Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takashi Hase
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Toshitsugu Sakamoto
Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Sakotsubo Yukihiro
Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kotsuji Setsu
Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Mitsuhiro Hada
Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
- Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory