Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory

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概要

• 論文の詳細を見る

• We investigated the conduction mechanism of a Ta2O5/TiO2-stacked resistance random access memory (ReRAM) device and found that its highly resistive state can be attributed to tunnel barriers induced in the filament, since single-electron tunneling phenomena was observed in the current–voltage characteristics at low temperatures and the resistance depended only slightly on temperature. We also found that the largest tunnel barrier, whose resistance is more than 1000 times larger than the second largest one, is located at the interface between the Ta2O5 layer and TiO2 layer and that variation in the resistance was caused by variation in the tunnel barrier width.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Terai Masayuki

  Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Setsu Kotsuji

  Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Toshitsugu Sakamoto

  Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Sakotsubo Yukihiro

  Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kotsuji Setsu

  Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Mitsuhiro Hada

  Device Platform Research Laboratories, NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

関連論文

• Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
• Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory

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