Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Sano Kousuke
Research Center For Nanodevices And Systems Hiroshima University
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HINO Masaki
Research Center for Nanodevices and Systems, Hiroshima University
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OOISHI Norihiro
Research Center for Nanodevices and Systems, Hiroshima University
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Ooishi Norihiro
Research Center For Nanodevices And Systems Hiroshima University
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Hino Masaki
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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