Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n+/p Junctions by Heat-Assisted Excimer Laser Annealing
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概要
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Low-resistive ultrashallow n+/p junctions were formed with Sb as a dopant by heat-assisted laser annealing. A process window platted against laser energy density and substrate temperature was obtained in which the sheet resistance was about 500 $\Omega$/sq. while the junction depth was maintained at about 20 nm, which was equal to that of the as implanted condition. Cross-sectional transmission electron microscopy (XTEM) images showed that substrate heating before laser irradiation enhanced recrystallization of the amorphized layer. This causes non melt laser annealing using the complete recrystallization of the amorphized layer. From current–voltage characteristics of n+/p diodes in the reverse direction, leakage current reduction accompanying the heat-assisted annealing was confirmed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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Kurobe Ken-ichi
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Ishikawa Yoshinori
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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