Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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EGUSA Kazuhiko
Research Center for Nanodevices and Systems, Hiroshima University
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Egusa Kazuhiko
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Kamesaki Koji
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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