A Study of Electrical Characteristics Improvements in Sub-0.1 μm Gate Length MOSFETs by Low Temperature Operation
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概要
- 論文の詳細を見る
MOSFETs with sub-0.1μm gate length were fabricated, and their low temperature operation was investigated. The drain current for drain voltage of 2 V increased monotonously as temperature was lowered to 15 K without an influence of the freeze-out effect. Moreover, the increase in the drain current was enhanced by the gate length reduction. The hot-carrier effect at low temperature was also investigated. Impact-ionization decreased as temperature was lowered under the condition of drain voltage ≤ 2 V. The decreasing ratio was enhanced as gate length became shorter. We consider this phenomenon is attributed to the non-steady-stationary effect. As a result, device degradation by DC stressing was reduced at 77 K in comparison with room temperature. In the case of 0.1 μm MOSFET, drain current was not degraded in condition of DC stress with gate- and drain-voltage was 1.5 V.
- 社団法人電子情報通信学会の論文
- 1998-12-25
著者
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Yokoyama S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Yokoyama S
Communication Res. Lab. Kobe Jpn
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TSUNO Morikazu
the Research Center for Nanodevices and Systems, Hiroshima University
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YOKOYAMA Shin
the Research Center for Nanodevices and Systems, Hiroshima University
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SHIBAHARA Kentaro
the Research Center for Nanodevices and Systems, Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Tsuno M
The Research Center For Nanodevices And Systems Hiroshima University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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