Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-06-01

著者

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Yokoyama S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• YOKOYAMA Shin

  Research Center for Nanodevices and Systems, Hiroshima University

• FUKUDA Masatoshi

  Department of Electrical Engineering, Hiroshima University

• NAKAGAWA Kazuyuki

  Department of Electrical Engineering, Hiroshima University

• Bjorkman Claes

  Research Center for Integrated Systems, Hiroshima University

• ALAY Josep

  Research Center for Integrated Systems, Hiroshima University

• SASAKI Sumio

  Research Center for Integrated Systems, Hiroshima University

• Sasaki Sumio

  Research Center For Integrated Systems Hiroshima University:(permanent Address)seiko Instruments

• Nakagawa Kazuyuki

  Department Of Electrical Engineering Hiroshima University

• Yokoyama Shin

  Research Center For Integrated Systems Hiroshima University

• Alay Josep

  Research Center For Integrated Systems Hiroshima University

• Bjorkman Claes

  Research Center For Integrated Systems Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Fukuda Masatoshi

  Department Of Electrical Engineering Hiroshima University

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