Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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Kawabata K
Division Of Physics Graduate School Of Science Hokkaido University
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YAMADA Keiichi
Department of Chemistry, Gunma University
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Yamada Kazushi
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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Hayashi Tsukasa
Nisshin Electric Co.
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Yamada Keiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Hirose M
Materials Research Center Tdk Corporation
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Kawabata Keishi
Department Of Electronics Engineering Hiroshima Institute Of Technology
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Kawabata K
Transdisciplinary Life Science Course Faculty Of Advanced Life Science Hokkaido University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yamada Keiichi
Department Of Chemistry & Chemical Biology Gunma University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Kawabata Kazushige
Division Of Biological Sciences Graduate School Of Science
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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