Hirose Minoru | Process Development Division Fujitsu Limited

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概要

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著作論文

Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
A New Technique of Boron Doping in Si:H Films
Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
Amorphous Silicon Static Induction Transistor
High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
Phonon Interaction in the Luminescence of Porous Silicon
Reabsorption of Visible Luminescence in Porous Si
Visible Photoluminescence from Porous Silicon
Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
Thickness-Shear Vibration Mode Characteristics of SrBi_4Ti_4O_-Based Ceramics
Piezoelectric Properties of SrBi_4Ti_4O_-Based Ceramics
Effect of Low-Molecula-Weight Novolak Resin on Microgrooves : Resist and Processes
Effect of Low-Molecular-Weight Novolak Resin on Microgrooves
Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes

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