Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
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概要
- 論文の詳細を見る
We report detailed studies on the forward current-voltage characteristics of Pd/a-Si: H Schottky barrier diodes. Exact values of the barrier height and its temperature coefficient have been determined by the internal photoemission technique. Based upon this result, the current transport mechanism through the a-Si: H Schottky barrier has been quantitatively examined. The fundamental characteristics of the Schottky barrier are considered to be dominated by diffusion theory rather than by thermionic emission theory.
- 社団法人応用物理学会の論文
- 1981-03-05
著者
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MISHIMA Yasuyoshi
Department of Electrical Engineering, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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Osaka Yukio
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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MISHIMA Yasuyoshi
Fujitsu Laboratories Ltd.
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Mishima Yasuyoshi
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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