Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^<119>Sn Mossbauer Spectroscopy
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概要
- 論文の詳細を見る
The network structure in hydrogenated amorphous silicon (a-Si:H) films including a small amount of tin has been investigated by means of Mossbauer spectroscopy. The quadrupole splitting ? of ^<119>Sn nuclei in a-Si:H films is very sensitive to the difference in the hydrogen bonding configuration, and is concluded to be a useful parameter for the characterization of the amorphous structure. The relation between ? and the IR spectra shows that the over-constrained region is formed in the a-Si:H network by the SiH group.
- 社団法人応用物理学会の論文
- 1987-12-20
著者
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明連 広昭
東北大通研
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MYOREN Hiroaki
Department of Electrical Engineering, Hiroshima University
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Myoren Hiroaki
Department Of Electrical And Electronic Systems Faculty Of Engineering Saitama University
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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SHRESTHA Purushottam
Department of Electrical Engineering, Hiroshima University
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Shrestha Purushottam
Department Of Electrical Engineering Hiroshima University
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