Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
スポンサーリンク
概要
- 論文の詳細を見る
Amorphous GeTe.films with the thickness ?0.5 prn, prepared by sputtering techni-que, transform into the crystalline GeTe. films with the isomorphic structure to p-cristobalite, cubic Sin., at 7'.(annealing temperature)=200'C. The cubic phase ofGeTe. is metastable and decomposes into the mixed crystal of GeTe and Te atT = 250'C.
- 1987-01-15
著者
-
OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
-
IMURA Takeshi
Department of Electrical Engineering, Osaka University
-
Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
-
Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
Imura T
Mitsubishi Paper Mills Ltd.
-
Imura T
Department Of Electrical Engineering Hiroshima University
-
Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Tsunetomo K
Nippon Sheet Glass Co. Ltd. Ibaraki Jpn
-
TSUNETOMO Keiji
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
-
FUKUMOTO Hirofumi
Department of Electrical Engineering, Hiroshima University
-
Fukumoto Hirofumi
Department Of Electrical Engineering Hiroshima University
-
OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
関連論文
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Sensitive Detection of Hydrogen in a-Si: H by Coincidence Measurement of Elastically Scattered 100 MeV ^3He^ Ions and Recoil Protons
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Amorphous Silicon Static Induction Transistor
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
- Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
- Chalcogenide Amorphous Semiconductor Diodes
- Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
- Photodoping of Ag into Single Crystal As_2S_3
- Dependence of RF Power on the Content and Configuration of Hydrogen in Amorphous Hydrogenated Silicon by Reactive Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after Fabrication
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
- Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
- Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
- Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Interface States Induced by Amorphous SiO_2 in MOS Structures
- Fabrication of Si:H Alloy with Plenty of -SiH_3 by Reactive Sputtering onto Low Temperature Substrate
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
- CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
- Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
- Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Binding Energy of a Screened Hydrogenic Impurity in a Quasi One-Dimensional Electron Gas
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Formation of Polycrystalline SiC in ECR Plasma
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
- Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
- Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Electrical and Optical Properties of Amorphous Germanium
- Structural and Electronic Characterization of Discharge-Produced Boron Nitride
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures
- Current Transport in Doped Polycrystalline Silicon
- Note on Localized States in Amorphous Germanium
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Optical Emission Spectroscopy of the SiH_4-NH_3-H_2 Plasma during the Growth of Silicon Nitride