Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
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概要
- 論文の詳細を見る
An exact theory for the calculation of the electronic density of bulk gap states in amorphous semiconductors from field effect and capacitance-voltage measurements is presented. The analytical expression for the density of the gap states is given as a function of the surface potential of amorphous semiconductors. It is also shown that the influence of surface states on the measured gap states can be completely eliminated by combining a capacitance-voltage method with a field effect technique.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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SUZUKI TOHRU
Department of Chemical Engineering, Faculty of Engineering, Nagoya University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Suzuki Tohru
Department Of Electronics Hiroshima Institute Of Technology
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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