Interface States Induced by Amorphous SiO_2 in MOS Structures
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概要
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In order to understand physical origin of interface states in MOS structures,model calculations of the interface states are carried out. The model of the idealSi-Sin, interface is introduced. This model represents that the Si-Sin. interfaceis given as the boundary between two bonding-type materials and the intrinsicinterface state is absent. It will be assunted that observed interface state is causedby the difference between real interface and the ideal one. The real boundary ofMOS structures may be described approximately in terms of the crystalline Si andthe amorphous Sin. with an ideal glassy structure. Based on the simple modelof amorphous Sin, the density of interface states is calculated semi-qualitatively.The obtained results suggest that the interface states induced by the amorphousSin. do not give the observed density of the interface states and the amorphousstate of Si0 may take into account this density.
- 1977-02-15
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