Localized States in Amorphous and Polycrystallized Si
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概要
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Optical and electrical properties of electron-beam deposited amorphous Si films have been measured in a wide range of annealing temperatures to investigate the nature of localized states. Polycrystallization of Si films was found to be accompanied by an abrupt decrease in the refractive index and film thickness. The localized state density near the Fermi level is obtained to be 〜10^<20>cm^<-3>eV^<-1> for as-deposited samples from capacitance measurements of a-Si/SiO_2/p^+Si tunnel junctions. Field effect results showed that this density is reduced to 〜10^<18>cm^<-3>ev^<-1> by annealing at 650℃ and subsequently to 〜10^<17>cm<-3>ev^<-1> after polycrystallization. On the other hand, the density at 〜0.21eV above the Fermi level remains almost unchanged around 5×10^<19>cm^<-3>eV^<-1> irrespectve of annealing and polycrystallization, suggesting the presence of a common structural defect in amorphous and polycrystalline Si.
- 社団法人応用物理学会の論文
- 1978-06-05
著者
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University
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Nakashita Toshio
Department Of Applied Physics
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Physics Tokai University
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OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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