Model Calculation of Interface State in a MOS Structure
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概要
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In order to understand physical origin of interface states in a MOS structure, model calculations of the interface states are carried out. The model of the ideal Si-SiO_2 interface is introduced. This model represents that the Si-SiO_2 interface is given as the boundary between two bonding-type materials and the intrinsic interface states is absent. It will be assumed that observed interface state is caused by the difference between real interface and the ideal one. Model calculations show the following results. The gate metal is effective on interface state formation only thinner SiO_2 film (the film width is less than 20 Å). The density of interface state nearly independent of the type of metals.
- 社団法人日本物理学会の論文
- 1976-09-15
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