Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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Kohno Kenji
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka Yukio
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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TANABE Yukiya
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Tanabe Yukiya
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima-Denki Institute of Technology
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