Optical Emission Spectroscopy of the SiH_4-NH_3-H_2 Plasma during the Growth of Silicon Nitride
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概要
- 論文の詳細を見る
Optical emission spectroscopy of the SiH_4-NH_3-H_2 glow discharge revealed the presence of the reactive species, Si, SiH, NH, H, and H_2 in the plasma. The silane flow rate dependence of the emission intensities from these species has been well correlated with the growth rate of the resulting Si : N : H films and their compositional ratio of silicon to nitrogen. Furthermore, the numbers of SiH and NH bonds incorporated in the film are found to be proportional to the emission intensities of the SiH band and NH line, respectively. The growth mechanism of Si : N : H from the reactive SiH and NH molecules is discussed from these results.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yokoyama Shin
Department Of Electrical Engineering Hiroshima University
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Yokoyama Shin
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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