Structural Changes of Amorphous Ge_<1-x>Sn_x Alloy Films by Annealing

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概要

• 論文の詳細を見る

• Microcrystalline (μc-) grains of Ge_<1-y>Sn_y (0.1 ≲ y ≲ 0.4) were precipitated by thermal treatments of amorphous films of a Ge_<1-x>Sn_x(x≲0.4) alloy deposited by co-sputtering. At higher temperatures grains of β-Sn came out, co-existing with those of μc-Ge_<1-y>Sn_y. Mossbauer spectroscopy was used to characterize states of Sn in a Ge-Sn alloy film. Optical properties, such as the real part ε_1 of the complex dielectric constant for Ge_<0.65>Sn_<0.35>, also changed as the structure change, especially at a photon energy of 1.6〜1.8 eV, where ε_1 took a maximum. It was suggested that an amorphous Ge-Sn alloy might be a good material for archival-type optical storage.

• 社団法人応用物理学会の論文
• 1986-09-20

著者

• 明連 広昭

  東北大通研

• Myoren Hiroaki

  Department Of Electrical And Electronic Systems Faculty Of Engineering Saitama University

• Osaka Y

  Department Of Electrical Engineering Hiroshima-denki Institute Of Technology

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Imura T

  Mitsubishi Paper Mills Ltd.

• Imura T

  Department Of Electrical Engineering Hiroshima University

• Imura Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• FUKUMOTO Hirofumi

  Department of Electrical Engineering, Hiroshima University

• Nakashita Toshio

  Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph

• Nakashita Toshio

  Department Of Applied Physics

• Fukumoto Hirofumi

  Department Of Electrical Engineering Hiroshima University

• Nakashita Toshio

  Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Physics Tokai University

• OSAKA Yukio

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• Imura Takeshi

  Department of Chemistry, Faculty of Engineering Science, Osaka University

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