Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-11-20

著者

• OSAKA Yukio

  Department of Electrical Engineering, Hiroshima University

• KODAMA Takeshi

  Department of Chemistry, Tokyo Metropolitan University

• IWAOKA Teiji

  Department of Electrical Engineering, Hiroshima University

• Iwaoka Teiji

  Department Of Electrical Engineering Hiroshima University

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Kodama Takeshi

  Department Of Electrical Engineering Hiroshima University

• Kodama Takeshi

  Department Of Applied Physics Waseda University

関連論文

• YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Production and Characterization of Heteroatom-encapsulated Metallofullerene, CaHo@C_
• Molecular Conductor Based on Reduced π-System Donor : Insulating State of (MeDH-TTP)_2AsF_6
• Selective Extraction of Endohedral Metallofullerenes Using a Mixed Solvent of Triethylamine and Acetone
• Isolation and Characterization of a New Isomer of Ca@C_
• Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
• Microcrystallization in P-Doped Si:H Films at High Deposition Rate
• Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
• Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Amorphous Silicon Static Induction Transistor
• Exciton Structure in Alkali-Halide Crystals
• Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
• Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
• Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
• Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
• Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
• Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
• Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
• Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
• Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
• Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
• Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
• Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
• A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
• Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
• Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
• Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
• Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
• Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
• Reflectance spectra of BN Materials in the Vacuum Ultraviolet
• Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
• Photoluminescence from Si Network in SiO_2-Doped Si Films
• Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
• Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
• Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
• Interface States Induced by Amorphous SiO_2 in MOS Structures
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
• Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
• DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
• Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
• Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
• Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
• CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
• Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
• Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
• Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
• Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
• Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
• Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
• Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
• Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
• Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
• Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
• Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
• Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition
• Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
• Crystal Structure and Magnetic Properties of Organic Radical Cation Salt, α-(Benzo[1,2-d:4,5-d']bis[1,3,2]dithiazole)_2ReBr_6
• Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
• Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
• Binding Energy of a Screened Hydrogenic Impurity in a Quasi One-Dimensional Electron Gas
• Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
• Formation of Polycrystalline SiC in ECR Plasma
• Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
• Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
• Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
• Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
• Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
• Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
• Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
• Electrical and Optical Properties of Amorphous Germanium
• Structural and Electronic Characterization of Discharge-Produced Boron Nitride
• Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
• Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
• Gap States and ESR of Boron-Doped CVD Amorphous Silicon
• Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
• Localized States in Amorphous and Polycrystallized Si
• Surface States in Tunnelable MOS Structures
• Current Transport in Doped Polycrystalline Silicon
• Note on Localized States in Amorphous Germanium
• Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
• Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
• Optical Emission Spectroscopy of the SiH_4-NH_3-H_2 Plasma during the Growth of Silicon Nitride
• Electron Spin Resonance in Discharge-Produced Silicon Nitride
• Discrete Shifts of Absorption and Emission Lines by Individual Electron-Hole Pair Excitation in DC-Biased Quantum Box Structures
• Infrared Polarized Reflection Spectra of SrTiO_3 Thin Films on Metal/Si
• Collective Excited States and Dielectric Constant in Insulators
• Note on the Boltzmann Equation for Polarons
• Theory of the Anomalous Magnetoresistance in Amorphous Si and Ge

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