Gap States and ESR of Boron-Doped CVD Amorphous Silicon
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概要
- 論文の詳細を見る
The density distribution of the gap states in boron-doped CVD amorphous silicon has been determined by the field-effect technique. The measured density of the midgap states as high as 2 × 10^<18> cm^<-3> eV^<-1> for undoped a-Si is appreciably reduced by doping with boron atoms. Electronic states arising from unpaired spins are found at energies near E_v+0.30 eV, creating a bump in the gap states. The experimental results are discussed in conjunction with a divacancy model.
- 社団法人応用物理学会の論文
- 1981-03-05
著者
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University
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Nakashita Toshio
Department Of Applied Physics
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Physics Tokai University
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OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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