Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Microcrystalline cubic BN films have been prepared on a Si substrate by plasma chemical vapor deposition. The formation of the cubic BN phase in the films necessitated an appropriate negative self-bias on the substrate electrode. Effects of the negative self-bias on the growth of the cubic phase were studied. The dependence of the deposition rate and etching rate of the films on a negative self-bias shows that the cubic phase is generated by the precursors of radical or ion species induced by an ion current in a plasma, and the deposition rate is determined by the generation rate due to these precursors and the etching rate of the cubic phase. In contrast with this, the generation rate of the hexagonal BN phase is independent of the ion current in a plasma.
- 1991-02-15
著者
-
Okamoto Masaki
Department Of Applied And Bioapplied Chemistry Graduate School Of Engineering Osaka City University
-
Okamoto Masaki
Department Of Electrical Engineering Hiroshima University
-
Osaka Yukio
Department Of Electrical Engineering Hiroshima University
-
Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
YOK0YAMA Haruki
Department of Electrical Engineering Hiroshima University
関連論文
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- Massive Eosinophilic Pleural Effusion Preceding Vasculitic Symptoms in Churg-Strauss Syndrome
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Thermoelectric Properties of Amorphous Zinc Oxide Thin Films Fabricated by Pulsed Laser Deposition
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Amorphous Silicon Static Induction Transistor
- The Effects of Impurities on Crystallization of Polymorphs of a Drug Substance AE1-923
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Development of Novel Immobilization Supports of Lipase for Reactions in Organic Media : Seed Polymerization of Amphiphilic 2-[p-(1,1,3,3-Tetramethyl-Butyl) Phenoxy-Polyethoxy] Ethyl Methacrylate Macromonomers
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
- Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
- Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
- Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Interface States Induced by Amorphous SiO_2 in MOS Structures
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- Active Utilization of Solvent-Mediated Transformation for Exclusive Production of Metastable Polymorph Crystals of AE1-923
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
- CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
- Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
- Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Binding Energy of a Screened Hydrogenic Impurity in a Quasi One-Dimensional Electron Gas
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Formation of Polycrystalline SiC in ECR Plasma
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
- Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
- Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Electrical and Optical Properties of Amorphous Germanium
- Structural and Electronic Characterization of Discharge-Produced Boron Nitride
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures
- Current Transport in Doped Polycrystalline Silicon
- Note on Localized States in Amorphous Germanium
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Superimposed Emissions on Enhanced Green Emission from ZnO:Pr Powders by Evacuated Sealed Silica Tube Method
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Estimation of Schottky Contacts to Porous Si by Photoacoustic Spectroscopy
- Imaginary Part of the Dielectric Function of Sintered and Microcrystalline Cubic Boron Nitride
- Photoacoustic Spectra of Heavily Co-Doped ZnO Powders
- Photoacoustic and Photoluminescence Spectra of Annealed 3,4,9,10-Perylenetetracarboxylic Dianhydride Films
- Successful Treatment with Tacrolimus in a Case of Lung-dominant Connective Tissue Disease